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CHE1260
RoHS COMPLIANT
10-27GHz Bidirectionnal Detector
GaAs Monolithic Microwave IC
Description
The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. It allows the measurement of transmitted and reflected power. It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1m gate length, via holes through the substrate and air bridges. It is available in chip form.
Incident power detection (mV)
10000 10GHz 12GHz 27GHz 17GHz
Vref_R DC_R
Vdet_R
RF_in
RF_out
Vdet_I
DC_I
Vref_I
Main Features
Wide frequency range 10-27GHz
Bidirectionnal detection 30dB dynamic range ESD protected Chip size: 1.41 x 1.41 x 0.1 mm BCB layer protection (see page 8)
Vref_I - Vdet_I (mV)
22GHz
1000
100
10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
Main Characteristics
Tamb = +25 VDC = +4.5V (on DC_I and DC_R) C, Symbol F IL Dr Parameter Frequency range Insertion Loss Dynamic Range Min 10 0.8 30 Typ Max 27 Unit GHz dB dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHE1260-8058 - 28 Feb 08 1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHE1260
Electrical Characteristics
Tamb = +25 VDC = +4.5V (on DC_I and DC_R) C, Symbol F IL Cd Dr Pr Parameter Frequency range Insertion Loss Coupler Directivity Dynamic Range Power Range: 10 - 17GHz 17 - 21GHz 21 - 24GHz 24 - 27GHz (for transmitted and/or reflected power) Vdetect_I Voltage detection from transmitted power Vref_I - Vdet_I From Pr_min to Pr_max Vdetect_R Voltage detection from reflected power Vref_R - Vdet_R From Pr_min to Pr_max RLin RLout VDC IDC Input return loss Output return loss Bias Voltage Bias Current (on ports DC_I or DC_R) -1 -3 -6 -8
10-27GHz Detector
Min 10
Typ
Max 27
Unit GHz dB dB dB
0.8 13 30
dBm
20 to 2500 20 to 2500 -11 -11 4.5 33 dB dB V A mV mV
These values are representative of on-wafer measurements that are made without bonding wires at the RF ports but with 100k resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and Vref_R (see notes, page 8).
Absolute Maximum Ratings (1)
Tamb = +25 C Symbol VDC Top Tstg P_max Parameter Bias voltage (on ports DC_I and DC_R) Operating temperature range Storage temperature range Maximum power (for transmitted and/or reflected power) Values 6 -40 to +85 -55 to +125 30 Unit V C C dBm
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHE1260-8058 - 28 Feb 08 2/8 Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
10-27GHz Detector
Typical on-wafer Sij parameters
CHE1260
Tamb = +25 Vdc = +4.5V (on DC_I and DC_R), 100k resistor in parallel on pads Vdet_I, C, Vref_I, Vdet_R and Vref_R (see notes, page 8).
Freq (GHz) dB(S11) Ph(S11) ( dB(S12) Ph(S12) ( dB(S2 1) Ph(S21) ( dB(S22) Ph(S22) ( ) ) ) )
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 -32.9 -30.0 -27.7 -25.8 -24.1 -22.6 -21.3 -20.0 -18.8 -17.7 -16.6 -15.0 -14.2 -13.6 -12.9 -12.3 -11.8 -11.4 -11.0 -10.7 -10.5 -10.4 -10.8 -10.9 -10.7 -11.0 -11.1 -11.4 -11.9 -12.5 -13.3 -14.4 -15.1 -16.9 -19.0 -20.3 -20.8 -15.1 -12.5 -10.2 -8.3 -6.9 -5.7 -4.7 54 52 50 47 42 36 31 25 19 13 6 1 -6 -13 -19 -26 -33 -40 -46 -53 -59 -67 -74 -76 -81 -86 -90 -95 -100 -104 -108 -108 -104 -108 -99 -79 -51 -34 -33 -37 -41 -47 -53 -59 -0.1 -0.1 -0.1 -0.1 -0.2 -0.2 -0.2 -0.2 -0.3 -0.3 -0.3 -0.4 -0.4 -0.5 -0.5 -0.5 -0.6 -0.6 -0.7 -0.7 -0.8 -0.8 -0.9 -0.9 -0.9 -0.9 -1.0 -1.0 -1.0 -1.0 -1.0 -1.1 -1.1 -1.1 -1.1 -1.1 -1.1 -1.3 -1.5 -1.7 -2.1 -2.4 -2.8 -3.3 -13 -20 -27 -33 -40 -46 -53 -60 -66 -73 -79 -86 -93 -99 -106 -113 -119 -126 -132 -139 -146 -152 -158 -165 -172 -179 175 168 161 154 147 140 133 125 118 110 102 93 84 76 67 59 51 43 -0.1 -0.1 -0.1 -0.1 -0.2 -0.2 -0.2 -0.2 -0.2 -0.3 -0.3 -0.4 -0.4 -0.5 -0.5 -0.5 -0.6 -0.6 -0.7 -0.7 -0.8 -0.8 -0.9 -0.9 -0.9 -0.9 -1.0 -0.9 -1.0 -1.0 -1.0 -1.1 -1.1 -1.1 -1.1 -1.1 -1.1 -1.3 -1.5 -1.7 -2.0 -2.4 -2.8 -3.3 -13 -20 -27 -33 -40 -46 -53 -60 -66 -73 -79 -86 -93 -99 -106 -113 -119 -126 -132 -139 -146 -152 -158 -165 -172 -179 175 168 161 154 147 140 133 125 118 110 102 93 84 76 67 59 51 43 -32.5 -29.8 -27.7 -25.9 -24.1 -22.6 -21.2 -20.0 -18.8 -17.7 -16.6 -15.0 -14.3 -13.5 -12.8 -12.2 -11.8 -11.3 -11.0 -10.6 -10.4 -10.2 -10.5 -10.8 -10.8 -10.8 -11.0 -11.2 -11.7 -12.3 -13.0 -13.7 -14.9 -16.3 -18.0 -19.0 -18.9 -14.7 -12.1 -9.9 -8.2 -6.7 -5.6 -4.6 53 50 49 45 40 34 28 22 17 10 4 -1 -8 -14 -21 -28 -34 -40 -46 -53 -60 -67 -74 -76 -80 -84 -89 -93 -97 -101 -103 -105 -103 -104 -92 -74 -51 -38 -36 -37 -42 -47 -52 -57
Ref: DSCHE1260-8058 - 28 Feb 08
3/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHE1260
Typical Measured Performance
On-wafer measurements (without bonding wires at RF ports).
10-27GHz Detector
Tamb = +25 Vdc = +4.5V (on DC_I and DC_R), 100k resistor in parallel on pads Vdet_I, C, Vref_I, Vdet_R and Vref_R (see notes, page 8).
0.0 -0.5 -1.0 -1.5
Insertion Loss versus frequency
IL (dB)
-2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36
Frequency (GHz)
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 2 4 6 8
Input and Output Return Losses versus frequency
RLin
RLout
Return Losses (dB)
10
12
14
16
18
20
22
24
26
28
30
32
34
36
Frequency (GHz)
Ref. : DSCHE1260-8058 - 28 Feb 08
4/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
10-27GHz Detector
CHE1260
Incident power detection versus Incident power @ different frequencies (Vdetect_I)
10000
10GHz
12GHz 27GHz
17GHz
Vref_I - Vdet_I (mV)
22GHz
1000
100
10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
The CHE1260-98F is a bidirectionnal detector using a symmetrical bidirectionnal coupler. Therefore the incident power detection versus incident power is identical to the reflective power detection versus reflected power. The reflective power detection versus incident power depends on both the coupler directivity and the reflective environment of the chip.
Incident and reflective power detection versus Incident power @ 10GHz (Vdetect_I & Vdetect_R)
10000
Vref_I - Vdet_I & Vref_R-Vdet_R (mV)
1000 Incident Reflective
100
10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
Ref: DSCHE1260-8058 - 28 Feb 08 5/8 Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHE1260
10-27GHz Detector
Incident and reflective power detection versus Incident power @ 17GHz (Vdetect_I & Vdetect_R)
10000
Vref_I - Vdet_I & Vref_R-Vdet_R (mV)
1000 Incident Reflective
100
10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
Incident and reflective power detection versus Incident power @ 22GHz (Vdetect_I & Vdetect_R)
10000
Vref_I - Vdet_I & Vref_R-Vdet_R (mV)
1000 Incident Reflective
100
10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
Ref. : DSCHE1260-8058 - 28 Feb 08
6/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
10-27GHz Detector
CHE1260
Incident and reflective power detection versus Incident power @ 27GHz (Vdetect_I & Vdetect_R)
10000
Vref_I - Vdet_I & Vref_R-Vdet_R (mV)
1000 Incident Reflective
100
10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
Chip assembly and Mechanical data:
DC Pads Size: 100/100 m, Chip thickness: 100 m Note: Supply feed might be capacitively bypassed. 25m diameter gold wire is to be prefered.
Ref: DSCHE1260-8058 - 28 Feb 08 7/8 Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHE1260
Note
100k
10-27GHz Detector
Vref_R DC_R Vdet_R
100k
RF_in RF_in
RF_out RF_out
100k Vdet_I DC_I Vref_I
100k
Recommended external resistors assembly
100k resistors in parallel with Vdet_I, Vref_I, Vdet_R and Vref_R pads are recommended to provide the best behaviour in the whole operating temperature range. As the voltage detection is the difference between Vref_X and Vdet_X (X= I or R), the external resistor value should be identical on these ports. For information, a variation of 2% leads around 1mV variation of detected voltage. ESD protections are implemented on Vdet_I, Vref_I, Vdet_R and Vref_R accesses. Due to the BCB coating on the chip, qualification domain implies the chip must be glued.
Ordering Information
Chip form: CHE1260-98F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S
Ref. : DSCHE1260-8058 - 28 Feb 08
8/8
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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